Accession Number : AD0659464

Title :   INVESTIGATION OF THE GROWTH OF SINGLE CRYSTAL SILICON CARBIDE BY THE TRAVELLING SOLVENT AND OTHER METHODS,

Corporate Author : TYCO LABS INC WALTHAM MASS

Personal Author(s) : Das,B. N. ; Mlavsky,A. I. ; Lamport,C. B. ; Trickett,E. A. ; Wolf,G. A.

Report Date : JUL 1967

Pagination or Media Count : 31

Abstract : The Travelling Heater Method (THM) crystal growth of SiC from a graphite crucible in Cr-Si-C was investigated. Porous, coarse crystalline, cylindrical SiC rods were obtained. Preliminary results strongly suggest that the growth of solid SiC rods by THM will be experimentally feasible, if axial and radial heat flow and temperature gradient are properly monitored. Beta-SiC whiskers were grown by a VLS mechanism. An attempt is being made to analyze the composition of the growth matrix material by X-ray and electron diffraction so that SiC whiskers, or large SiC crystals, could reproducibly be grown from this solvent. The recently developed laser reflectogram technique was applied to the study of the SiC surface crystallography for various SiC crystal preparations and surface treatments. (Author)

Descriptors :   (*SILICON CARBIDES, *CRYSTAL GROWTH), (*WHISKERS(CRYSTALS), SILICON CARBIDES), SINGLE CRYSTALS, RODS, X RAY DIFFRACTION, ELECTRON DIFFRACTION, COHERENT RADIATION, REFLECTION, SURFACE PROPERTIES

Subject Categories : Ceramics, Refractories and Glass
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE