Accession Number : AD0660577
Title : INVESTIGATION AND DEVELOPMENT OF SEMICONDUCTOR-METAL CATHODES.
Descriptive Note : Final rept. 16 May 66-15 Aug 67,
Corporate Author : HEWLETT-PACKARD LABS PALO ALTO CALIF
Personal Author(s) : Yep,Thomas O. ; Archer,Robert J.
Report Date : AUG 1967
Pagination or Media Count : 69
Abstract : A major phase in the development and characterization of rectifying metal-semiconductor contacts for application to cathodic emission was completed. A number of contacts meet the requirements of Schottky barrier heights equal to or greater than 1.5 eV and V-I slope constants (q/kT dV/d ln I near unity. Results are presented for contacts on B6P, ZnO, ZnS, GaAs1-xPx, GaP and ZnSe. Most effort was concentrated on Cu, Ag and Au contacts to GaP and ZnSe. Contacts with both etch-polished and vacuum-cleaved interfaces were studied, and (for GaP) both the influence of surface crystalline orientation and the temperature dependence of the contact properties determined. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, *CATHODES), (*THERMIONIC EMISSION, CATHODES), SEMICONDUCTORS, INTERFACES, ELECTRIC CONNECTORS, ETCHED CRYSTALS, BORON COMPOUNDS, PHOSPHIDES, ZINC COMPOUNDS, OXIDES, ZINC SULFIDES, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, SELENIUM COMPOUNDS, METAL FILMS, COPPER, SILVER, GOLD, BAND THEORY OF SOLIDS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE