Accession Number : AD0661042

Title :   HETEROCRYSTAL INTEGRATED CIRCUIT TECHNIQUES.

Descriptive Note : Quarterly rept. no. 5, 1 Mar-31 May 67,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Teague,E. Clayton ; Watelski,Stacy B. ; Dennis,C. ; Sharif,L.

Report Date : OCT 1967

Pagination or Media Count : 22

Abstract : The report contains a summary of experimental work related to the following topics: (1) Use of aluminum oxide, silicon oxide, and silicon nitride as possible masking materials for selectively etching GaAs and Ge deposition in GaAs; (2) Isolation properties of GaAs sub SI as received from crystal processing and after oxide and germanium growth; (3) Device characteristics of junctions formed in germanium regions selectively grown in germanium and in gallium arsenide substrates. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, MANUFACTURING), GERMANIUM, CRYSTAL GROWTH, GALLIUM ARSENIDES, SUBSTRATES, DEPOSITION, ETCHING, MASKING, ALUMINUM COMPOUNDS, OXIDES, SILICON COMPOUNDS, NITRIDES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE