Accession Number : AD0661042
Title : HETEROCRYSTAL INTEGRATED CIRCUIT TECHNIQUES.
Descriptive Note : Quarterly rept. no. 5, 1 Mar-31 May 67,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Personal Author(s) : Teague,E. Clayton ; Watelski,Stacy B. ; Dennis,C. ; Sharif,L.
Report Date : OCT 1967
Pagination or Media Count : 22
Abstract : The report contains a summary of experimental work related to the following topics: (1) Use of aluminum oxide, silicon oxide, and silicon nitride as possible masking materials for selectively etching GaAs and Ge deposition in GaAs; (2) Isolation properties of GaAs sub SI as received from crystal processing and after oxide and germanium growth; (3) Device characteristics of junctions formed in germanium regions selectively grown in germanium and in gallium arsenide substrates. (Author)
Descriptors : (*INTEGRATED CIRCUITS, MANUFACTURING), GERMANIUM, CRYSTAL GROWTH, GALLIUM ARSENIDES, SUBSTRATES, DEPOSITION, ETCHING, MASKING, ALUMINUM COMPOUNDS, OXIDES, SILICON COMPOUNDS, NITRIDES
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE