Accession Number : AD0662748
Title : HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Descriptive Note : Quarterly rept. no. 10, 1 Jun-31 Aug 67,
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
Personal Author(s) : Topfer,Morton L. ; Schelhorn,Robert L. ; Mitchell,Joseph H.
Report Date : NOV 1967
Pagination or Media Count : 50
Abstract : Fabrication of 1-megohm thin-film hafnium resistors (10,000 ohms/sq.) exhibiting temperature coefficients of resistance (TCR) of approximately -900 ppm was accomplished. A complete TCR curve was plotted from experimental data obtained from samples between 6 and 10,000 ohms/sq. deposited on glazed ceramic substrates. Investigation of etching procedures for fine-line resistor patterns to be deposited on passivated silicon wafers was begun. New resistor test patterns were chosen which will yield 1000 individual elements of five different geometries per wafer. Procedures for fabrication of resistors and capacitors using hafnium technology on silicon are outlined. Detailed capacitance-voltage plots of the hafnium-dioxide films indicated the presence of contaminants. Modifications in the fabrication processes eliminated most of the contamination. Characteristics are reported for P-channel MOS devices which were fabricated. (Author)
Descriptors : (*FILMS, *RESISTORS), (*MICROELECTRONICS, *CIRCUITS), HAFNIUM, ELECTRICAL RESISTANCE, SUBSTRATES, HAFNIUM COMPOUNDS, OXIDES, SPUTTERING, ANODIC COATINGS, ETCHING, SILICON, SEMICONDUCTOR DEVICES, CAPACITORS, MANUFACTURING
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE