Accession Number : AD0662839

Title :   THE EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON THE GEOMETRY OF A FUSED P-N JUNCTION IN GALLIUM ARSENIDE,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Pavlova,O. I. ; Petrusevich,R. L.

Report Date : 03 AUG 1967

Pagination or Media Count : 9

Abstract : The effect of crystallographic orientation on the shape of fused p-n transition boundaries was studied in p-type gallium arsenide. The results showed that for melting on surfaces with (110) and (100) orientations the p-n-interface did not have a regular geometrical shape even for very small drops. Reference was made to the work of Ellis (J. Appl. Phys., 1959, v. 30, no. 6, p. 946) where gallium arsenide was grown on vertical (110) surfaces of seed crystals.

Descriptors :   (*GALLIUM ARSENIDES, *CRYSTAL STRUCTURE), ELECTRICAL PROPERTIES, SEMICONDUCTORS, DISLOCATIONS, INDIUM ANTIMONIDES, CRYSTAL GROWTH, SINGLE CRYSTALS, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE