Accession Number : AD0663092
Title : ELECTRONIC CONFIGURATION OF INDIUM ANTIMONIDE SURFACES.
Descriptive Note : Technical rept.,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE
Personal Author(s) : Huff,Howard R. ; Kawaji,Shinji ; Gatos,Harry C.
Report Date : NOV 1967
Pagination or Media Count : 13
Abstract : Large signal alternating current field effect experiments on surfaces of n and p-type InSb yielded results which were found to be consistent with a model according to which the discrete 'fast' states near the valence and conduction band edges are acceptor-like, characteristic of the antimony and indium species, respectively. This model was extended to emphasize the importance of sub-surface states. The electrical properties of these surfaces was correlated with their chemical and structural characteristics and was found to be consistent with the Gatos-Lavine model of the dangling bonds on the III-V compound surfaces.
Descriptors : (*SEMICONDUCTORS, SURFACE PROPERTIES), (*INDIUM ANTIMONIDES, *ATOMIC ENERGY LEVELS), SYMMETRY(CRYSTALLOGRAPHY), BAND THEORY OF SOLIDS, CRYSTAL STRUCTURE, CHEMICAL BONDS, ELECTRICAL PROPERTIES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE