Accession Number : AD0663092

Title :   ELECTRONIC CONFIGURATION OF INDIUM ANTIMONIDE SURFACES.

Descriptive Note : Technical rept.,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Huff,Howard R. ; Kawaji,Shinji ; Gatos,Harry C.

Report Date : NOV 1967

Pagination or Media Count : 13

Abstract : Large signal alternating current field effect experiments on surfaces of n and p-type InSb yielded results which were found to be consistent with a model according to which the discrete 'fast' states near the valence and conduction band edges are acceptor-like, characteristic of the antimony and indium species, respectively. This model was extended to emphasize the importance of sub-surface states. The electrical properties of these surfaces was correlated with their chemical and structural characteristics and was found to be consistent with the Gatos-Lavine model of the dangling bonds on the III-V compound surfaces.

Descriptors :   (*SEMICONDUCTORS, SURFACE PROPERTIES), (*INDIUM ANTIMONIDES, *ATOMIC ENERGY LEVELS), SYMMETRY(CRYSTALLOGRAPHY), BAND THEORY OF SOLIDS, CRYSTAL STRUCTURE, CHEMICAL BONDS, ELECTRICAL PROPERTIES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE