Accession Number : AD0663093
Title : OBSERVATION OF QUANTUM GALVANOMAGNETIC PHENOMENA IN N-TYPE INDIUM ANTIMONIDE.
Descriptive Note : Technical rept.,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE
Personal Author(s) : Huff,Howard R. ; Kawaji,Shinji ; Gatos,Harry C.
Report Date : DEC 1967
Pagination or Media Count : 21
Abstract : Quantization effects in the bulk galvanomagnetic properties of n-type InSb were studied in conjunction with the transport properties of compound semiconductor surfaces. The transverse and longitudinal magnetoresistivity were measured at 4.2, 50 and 77K. The former was found to increase with increasing magnetic field at all temperatures and (for a given temperature) was an order of magnitude larger than the latter which became saturated at the two higher temperatures. At 4.2K, the electrons were weakly degenerate and the bulk mobility was determined by screened ionized impurity scattering. At 77K, the electrons were non-degenerate and the predominant scattering mechanism was probably low temperature optical phonon scattering. (Author)
Descriptors : (*SEMICONDUCTORS, SURFACE PROPERTIES), (*INDIUM ANTIMONIDE, MAGNETIC PROPERTIES), QUANTUM THEORY, PHONONS, SCATTERING, TRANSPORT PROPERTIES, CRYOGENICS, MAGNETIC FIELDS, CARRIERS(SEMICONDUCTORS)
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE