Accession Number : AD0663723

Title :   SEMICONDUCTOR JUNCTION PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS,

Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL FACILITY

Personal Author(s) : Schwuttke,Guenter H.

Report Date : AUG 1967

Pagination or Media Count : 170

Abstract : Complex x-ray diffraction phenomena associated with diffused semiconductor junctions are successfully correlated with the performance of the semiconductor junction. The technique of x-ray stress topography is established that permits a rapid nondestructive analysis of the stress environment of film/crystal interfaces. Based on dynamical diffraction phenomena that occur at such interfaces, the technique is useful principally to measure the sign of the stress in film and/or substrate and to detect stress buildups and stress reversals connected with processing procedures -- in particular with those of the planar semiconductor device technology. Also, phosphorus diffusion into silicon is explored near and above the solubility limit through radiochemical profiling and compared with crystal damage by x-ray diffraction microscopy and Sirtl etch techniques. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, MANUFACTURING), (*CRYSTAL DEFECTS, *SEMICONDUCTORS), EPITAXIAL GROWTH, NONDESTRUCTIVE TESTING, X RAY DIFFRACTION, CRYSTAL STRUCTURE, PHOSPHORUS, SILICON, GERMANIUM, DIFFUSION, INTERFACES, DISLOCATIONS, DENDRITIC STRUCTURE, SEMICONDUCTING FILMS, CHEMICAL PRECIPITATION, TRANSISTORS

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE