Accession Number : AD0663737

Title :   ION IMPLANTED MOS DEVICE.

Descriptive Note : Final rept. Apr 66-Aug 67,

Corporate Author : ION PHYSICS CORP BURLINGTON MASS

Personal Author(s) : King,William J. ; Leith,Frank A. ; Guild,Carl

Report Date : DEC 1967

Pagination or Media Count : 35

Abstract : The final report is made on the fabrication of MOS transistors by ion implantation. Two different n-channel depletion mode MOS transistors were fabricated. These transistors are to be used to compare surface states of the ion implanted units with surface states of conventional diffused devices. (Author)

Descriptors :   (*TRANSISTORS, MANUFACTURING), METALS, OXIDES, SEMICONDUCTORS, DOPING, DAMAGE, RADIATION EFFECTS, ANNEALING, DISKS, CLEANING, OXIDATION, ALUMINUM COATINGS, VAN DE GRAAFF GENERATORS, DIFFUSION

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE