Accession Number : AD0665153

Title :   MIXED ELECTRON SCATTERING IN INSB,

Corporate Author : ROYAL INST OF TECH STOCKHOLM (SWEDEN) MICROWAVE DEPT

Personal Author(s) : Hammar,C.

Report Date : 17 OCT 1967

Pagination or Media Count : 19

Abstract : Numerical calculations of the field dependence of the electron mobility in InSb are presented. The effects of optical polar scattering and deformation potential scattering (acoustic and optical) are summed. The drifted Maxwellian approach is used. The high field dependence of the electron mobility is strongly dependent on the deformation potential. For a deformation potential of 7.2 eV dielectric breakdown is obtained, while for a value of 30 eV a voltage controlled negative differential mobility occurs. (Author)

Descriptors :   (*SEMICONDUCTORS, TRANSPORT PROPERTIES), (*INDIUM ANTIMONIDES, TRANSPORT PROPERTIES), ELECTRONS, POTENTIAL SCATTERING, STATISTICAL DISTRIBUTIONS, PHONONS, SWEDEN

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE