Accession Number : AD0665310

Title :   RELAXATION PHENOMENA ON INDIUM ANTIMONIDE SURFACES AT HIGH ELECTRIC FIELDS.

Descriptive Note : Technical rept.,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Huff,Howard R. ; Kawaji,Shinji ; Gatos,Harry C.

Report Date : JAN 1968

Pagination or Media Count : 19

Abstract : High voltage pulsed field effect experiments were performed on two surfaces of n-type InSb which were previously exposed to a mixture of chlorine and air. The observed relaxation phenomena were attributed to an emission of electrons from a 'slow' surface state into the conduction band. These phenomena were adequately described by a quantum mechanical tunnel equation. A 'slow' surface state was located approximately 0.04 eV below the conduction band edge on both surfaces. High voltage alternating current field effect experiments were concurrently performed on the same surfaces. (Author)

Descriptors :   (*SEMICONDUCTORS, SURFACE PROPERTIES), (*INDIUM ANTIMONIDES, *FIELD EMISSION), TRANSPORT PROPERTIES, BAND THEORY OF SOLIDS, TUNNELING(ELECTRONICS), FILMS, ELECTROMAGNETIC PULSES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE