Accession Number : AD0665433

Title :   CONDENSATION AND NUCLEATION PROCESSES OF SINGLE CRYSTAL THIN FILMS.

Descriptive Note : Technical rept. 14 Oct 66-14 Oct 67,

Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s) : Kikuchi,Ryoichi ; Braunstein,Morris

Report Date : OCT 1967

Pagination or Media Count : 157

Abstract : Theoretical and experimental investigations were conducted to evaluate those parameters which affect the nucleation, condensation, and subsequent growth rates of single crystal thin films. In the theoretical program, the path probability method was used to study the process of the film growth, with the particular objective of obtaining more reliable results than those reported previously. In the experimental program, single crystal silicon films were deposited on selected areas of fused quartz substrates using vapor-liquid solid techniques in conjunction with moving-mask-growth (VLS-MMG). Silicon single crystal areas ranging from 100 to 300 microns in lateral dimension were prepared at substrate temperatures from 800 to 900C. Optical and electron microscope and electron transmission diffraction observations were made of typical film sample areas. A vacuum system with a stainless steel chamber was set up for experiments so that slower rates of silicon deposition and mask motion could be achieved.

Descriptors :   (*SEMICONDUCTING FILMS, *CRYSTAL GROWTH), (*SILICON, CRYSTAL GROWTH), CONDENSATION, VAPOR PLATING, SINGLE CRYSTALS, NUCLEATION, DIFFERENTIAL EQUATIONS, SUBSTRATES, QUARTZ, MICROSCOPY, ELECTRON MICROSCOPY, ELECTRON DIFFRACTION, STATISTICAL MECHANICS, IRREVERSIBLE PROCESSES

Subject Categories : Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE