Accession Number : AD0666445

Title :   NEW SOLID-STATE DEVICE CONCEPTS.

Descriptive Note : Final rept. 1 Apr-31 Oct 67,

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Aven,Manuel ; Garwacki,Walter ; Hall,Robert N. ; Richardson,John R.

Report Date : JAN 1968

Pagination or Media Count : 79

Abstract : The report summarizes the ZnSexTe(1-x) light-emitting diode work carried out under the present contract. It includes recent investigations of the thermodynamics of ZnSexTe(1-x) crystal growth which are concerned with the effects of varying the partial pressure of the chalcogen and the donor or acceptor doping. The report also reviews the status of the thin-film GaAs storage diode. The experimental procedures and results are described in some detail. Reproducibility and compatibility with integrated circuitry are satisfactory and make this device attractive for use in memory arrays. Preliminary results on radiation tolerance are also given. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, *ELECTROLUMINESCENCE), (*MEMORY DEVICES, SEMICONDUCTOR DIODES), ZINC ALLOYS, TELLURIUM ALLOYS, SELENIUM ALLOYS, INTERMETALLIC COMPOUNDS, FILMS, GALLIUM ARSENIDES, THERMODYNAMICS, CRYSTAL GROWTH, DOPING, DAMAGE, RADIATION EFFECTS, CHALCOGENS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE