Accession Number : AD0668114

Title :   THERMAL EMF OF THE SOLID SOLUTIONS OF INDIUM PHOSPHIDE AND GALLIUM ARSENIDE,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Sirota,N. N. ; Makovetskaya,L. A.

Report Date : 29 AUG 1967

Pagination or Media Count : 9

Abstract : The dependence of the thermal emf on the composition and temperature has been investigated in InP, GaAs, and 9 InP-GaAs alloys with a composition varying from 0.1 InP-0.9 GaAs to 0.9 InP-0.1 GaAs, and an impurity concentration within limits of 1.7x10 to the 16th power to 3.0x10 to the 19th power. The thermal emf was measured on polycrystalline n- and p-specimens in a vacuum or a helium atmosphere in the 120 - 600 degrees K range; the temperature difference at the hot and cold ends of the specimens was 10 - 12 degrees C. The differential thermal emf readings were practically identical during heating or cooling and increased with increasing temperature after passing through a small minimum below room temperature. At all test temperatures, the maximum value of alpha squared sigma (where sigma is the specific electric conductivity) was observed in an alloy containing 30% GaAs; with increasing temperature, the value of alpha squared sigma increased.

Descriptors :   (*SEEBECK EFFECT, SOLID SOLUTIONS), TEMPERATURE, GALLIUM ARSENIDES, INDIUM COMPOUNDS, PHOSPHIDES, IMPURITIES, ELECTRICAL PROPERTIES, USSR

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE