Accession Number : AD0668449

Title :   ETCHING BEHAVIOR OF IN2O3 GROWN FROM PBO-B2O3,

Corporate Author : AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS

Personal Author(s) : Chase,Armond B. ; Teviotdale,James R.

Report Date : MAR 1968

Pagination or Media Count : 18

Abstract : Single crystals of In2O3 grown from a PbO-B2O3 solution are etched by HNO3 or HNO3-HCl solutions. Characteristic etch pits and etch tubes are described. The number of etch pits is found to be related to the growth history of the crystals. The relationship of the etch tubes to crystal growth is discussed. (Author)

Descriptors :   (*ETCHED CRYSTALS, *INDIUM COMPOUNDS), OXIDES, SINGLE CRYSTALS, ETCHING, NITRIC ACID, HYDROCHLORIC ACID, CRYSTAL GROWTH, DISLOCATIONS

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE