Accession Number : AD0668903

Title :   EFFECT OF COLLECTOR DESIGN ON HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Reich,Bernard ; Hakim,Edward B.

Report Date : FEB 1968

Pagination or Media Count : 15

Abstract : Hot-spot formation was studied as a function of collector resistivity and thickness variations for a similar group of epitaxial and triple-diffused silicon planar transistors. An infrared radiometer was used for locating and measuring hot-spot temperatures. Hot-spot thermal resistance is used in the analysis of both forward and reverse bias second breakdown performance. (Author)

Descriptors :   (*TRANSISTORS, PERFORMANCE(ENGINEERING)), SILICON, THERMAL CONDUCTIVITY, SEMICONDUCTORS, FAILURE(ELECTRONICS), DESIGN, ELECTRICAL RESISTANCE, THICKNESS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE