Accession Number : AD0669099

Title :   GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : Bartlett,Robert W. ; Mueller,Robert A.

Report Date : FEB 1968

Pagination or Media Count : 44

Abstract : Vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets is being studied using methyltrichlorosilane or mixtures of silane and propane. Although epitaxial deposits were achieved with either source gas, low octahedral steps (triangles) and numerous intergrown star-shaped hillocks on the alternate side usually occur. Process conditions were systematiclaly varied to improve the surface perfection, and n-type epitaxial layers with smooth surfaces free of hillocks were grown on n-type beta-silicon carbide crystal substrates using CH3SiCl3. Epitaxial deposits of n-type beta-silicon carbide were grown on aluminum-doped p-type silicon carbide substrates, and p-type epitaxial deposits were grown on n-type crystals using diborane for p-doping during vapor deposition. Processing of diodes requires a suitable etching procedure. Hydrogen etching through thermally grown oxide masks was not successful because of reduction of the oxide. Construction of apparatus for oxygen/chlorine etching of silicon carbide at modest temperature using oxide masking is ninety percent complete. A crude electroluminescent, epitaxial diode was demonstrated using a beta-silicon carbide crystal consisting of a p-type epitaxial layer deposited on an n-type substrate. (Author)

Descriptors :   (*SEMICONDUCTORS, SILICON CARBIDES), (*SILICON CARBIDES, *CRYSTAL GROWTH), VAPOR PLATING, SUBSTRATES, EPITAXIAL GROWTH, SILANES, PROPANE, SURFACE PROPERTIES, DOPING, IMPURITIES, ALUMINUM, BORANES, SEMICONDUCTOR DIODES, TRANSISTORS, ETCHING, MASKING, ELECTROLUMINESCENCE

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE