Accession Number : AD0669335
Title : SEMICONDUCTOR JUNCTION PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS.
Descriptive Note : Final rept. 15 Feb 65-15 Feb 68,
Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL FACILITY
Personal Author(s) : Schwuttke,Guenter H.
Report Date : MAR 1968
Pagination or Media Count : 25
Abstract : A short summary of the major results of semiconductor junction properties as influenced by crystallographic imperfections. Reference is made to the previous technical reports and scientific publications in which detailed discussion of the various phenomena is presented. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, *CRYSTAL DEFECTS), TRANSISTORS, CRYSTAL STRUCTURE, NONDESTRUCTIVE TESTING, SILICON, DIFFUSION, X RAY DIFFRACTION, DEFECTS(MATERIALS), MICROSCOPY, DENDRITIC STRUCTURE, PHOSPHORUS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE