Accession Number : AD0669365

Title :   HETEROJUNCTION DEVICES.

Descriptive Note : Final rept. Dec 64-Dec 67,

Corporate Author : SYRACUSE UNIV N Y DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Anderson,Richard L. ; Zeidenbergs,G. ; Davis,Mark

Report Date : MAR 1968

Pagination or Media Count : 85

Abstract : Sections I and II describe work done during the past year on the GaAs GaP heterojunction system. An open tube epitaxy system with HCl as a carrier gas was used to deposit GaAs upon GaP. From the deposits n-n, n-p and p-n GaAs-GaP heterojunctions were constructed. The electrical and optical properties were studied to determine the energy band profiles and approximate models for the current carrying mechanisms. Section III covers experimental work which was carried out on n-p Si-GaP heterojunctions to demonstrate explicitly the existence of inversion layers and study the feasibility of a field effect device. Section IV summarizes the work done over the whole three year contract span. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, MANUFACTURING), (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), EPITAXIAL GROWTH, TUNNELING(ELECTRONICS), ELECTRICAL PROPERTIES, OPTICAL PROPERTIES, FIELD EFFECT TRANSISTORS, INTEGRATED CIRCUITS, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, PHOSPHIDES, SILICON, DOPING

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE