Accession Number : AD0669850

Title :   FOUR-LAYER DIODE DEVELOPMENT PROGRAM.

Descriptive Note : Final rept.,

Corporate Author : ITT SEMICONDUCTOR PRODUCTS LABS PALO ALTO CALIF

Personal Author(s) : Scarlett,Robert M.

Report Date : APR 1968

Pagination or Media Count : 74

Abstract : This effort is the culmination of several years work to improve and demonstrate the four-layer diode in high power switch service. The fabrication of the device, its characteristics and an evaluation of performance of the device in a high voltage high current environment is discussed. Several device problems became evident during this effort and are characterized in the text. The failure rates, thermal dissipation problems, voltage distribution, repetition rate limitations and general device behavior are thoroughly discussed. (Author)

Descriptors :   (*ELECTRONIC SWITCHES, SEMICONDUCTOR DIODES), (*SEMICONDUCTOR DIODES, MANUFACTURING), MODULATORS, RELIABILITY(ELECTRONICS), VOLTAGE, FAILURE(ELECTRONICS), THERMAL STABILITY, LEAKAGE(ELECTRICAL), SILICON, BORON, DIFFUSION, SURFACE PROPERTIES, ENCAPSULATION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE