Accession Number : AD0670183

Title :   INVESTIGATION OF SEMICONDUCTOR SCHOTTKY BARRIERS FOR OPTICAL DETECTION AND CATHODIC EMISSION,

Corporate Author : HEWLETT-PACKARD CO PALO ALTO CALIF

Personal Author(s) : Archer,Robert J. ; Cohen,Jerome ; Vilms,Juri

Report Date : MAR 1968

Pagination or Media Count : 51

Abstract : A study was made of metal-semiconductor contacts, with dual emphasis on infra-red optical detection and on cathodic emission. A layered optical matching structure for increasing the efficiency of metal-semiconductor photoemissive detectors has been designed in theory. An initial experimental structure has shown sixfold efficiency improvement near 0.975 eV photon energy over a detector of conventional design. An anomalously high photoemissive yield has been observed for small-area diodes. Optical and cryogenic apparatus has been designed to permit extension of experimental work to 6 mu wavelength. A practical cathodic emission vehicle has been developed utilizing the Ag-GaP Schottky barrier. Au- and Ag-ZnS diodes have been found to have a 1.83 eV barrier height for a chemically prepared ZnS surface. (Author)

Descriptors :   (*SEMICONDUCTORS, OPTICAL PROPERTIES), (*INFRARED DETECTORS, SEMICONDUCTOR DEVICES), (*CATHODES, SEMICONDUCTOR DEVICES), THERMIONIC EMISSION, SEMICONDUCTOR DIODES, SILVER, GALLIUM COMPOUNDS, PHOSPHIDES, GOLD, ZINC SULFIDES, IMPEDANCE MATCHING, PHOTONS, EFFICIENCY, INTERFACES

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE