Accession Number : AD0670867
Title : LOCAL MODE STUDIES OF LI-DEFECT COMPLEXES IN GAAS AND B-P PAIRS IN SI.
Descriptive Note : Final rept. 1 Dec 66-29 Feb 68,
Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Spitzer,William G. ; Allred,Worth P. ; Levy,Miguel E. ; Lorimor,Orval G. ; Tsvetov,Victor P.
Report Date : APR 1968
Pagination or Media Count : 43
Abstract : Li-defect complexes in GaAs and B-P pairs in Si have been studied through infrared absorption spectroscopy of the associated localized vibrational modes. In Si, two infrared absorption bands attributed to B-P pairs are observed close to the isolated B band. The results are compared to the theory of Elliott and Pfeuty, and the number of pair bands, their isotope shift, and their proximity to the isolated B band are in general agreement with theory. In GaAs, bands observed after Li diffusion are identified with complexes of Li and native defects created during the diffusion process. The diffusion temperature dependence of the absorption band peaks obeys an effective activation energy expression (e exp. -E/kT), with E = 1.0eV. At least four defect complex species are present. Isotope mixture experiments show that at least one complex species contains more than one Li atom per complex. (Author)
Descriptors : (*CRYSTAL DEFECTS, *INFRARED SPECTROSCOPY), (*GALLIUM ARSENIDES, CRYSTAL DEFECTS), (*SILICON, CRYSTAL DEFECTS), SEMICONDUCTORS, LITHIUM, COMPLEX COMPOUNDS, BORON, PHOSPHORUS, EXCITATION, PHONONS, ABSORPTION SPECTRA, BAND THEORY OF SOLIDS, DIFFUSION
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE