Accession Number : AD0671176

Title :   EXCESS NOISE IN SEMICONDUCTORS.

Descriptive Note : Status rept. 1 Apr-30 Jun 68,

Corporate Author : IIT RESEARCH INST CHICAGO ILL

Personal Author(s) : Brophy,James J.

Report Date : 28 JUN 1968

Pagination or Media Count : 4

Abstract : Probability density distributions of the interval spacings between zero-crossings of band-limited Nyquist and 1/f noise signals are examined using an interval-to-pulse-height converter and a multichannel pulse-height analyzer. The Nyquist noise distributions follow a simple exponential law, as expected. In the case of 1/f noise, the distributions are approximately proportional to the inverse square of the spacing interval. The probability density is statistically stationary, that is, independent of sample length and independent of the sample selected. For signals in a 1 Hz to 5 kHz band, the most probable spacing interval is 1.2 x 0.0001 sec. which occurs with a maximum probability density of 2.2 x 1000/sec. The most probable value is inversely proportional to the highest signal frequency present and the peak probability density is proportional to this frequency. (Author)

Descriptors :   (*SEMICONDUCTORS, NOISE(RADIO)), PULSE HEIGHT ANALYZERS, DENSITY, STATISTICAL PROCESSES, MULTIPLE OPERATION, HIGH FREQUENCY, SAMPLING, REPORTS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE