Accession Number : AD0671982
Title : INVESTIGATION OF THE GROWTH OF SINGLE CRYSTAL SIC BY THE TRAVELLING SOLVENT AND OTHER METHODS.
Descriptive Note : Final rept. 1 Jan 67-31 Dec 67,
Corporate Author : TYCO LABS INC WALTHAM MASS
Personal Author(s) : Das,B. N. ; Lamport,C. B. ; Mlavsky,A. I. ; Trickett,E. A. ; Wolff,G. A.
Report Date : APR 1968
Pagination or Media Count : 73
Abstract : The travelling heater method was used for the growth of alpha-and beta-SiC crystals in graphite crucibles. Molten chromium was used as a solvent material for the solution zone which was kept between 1650 and 1900 degrees C. Solid polycrystalline SiC ingots 0.3 cm in diameter and 2 cm in length have been obtained, with the individual crystals having a grain size of up to 1 mm. Polycrystalline ingots of alpha-and beta-SiC crystals have also been obtained by slow cooling of a molten alloy solution of Cr and SiC mixtures in graphite crucibles. SiC crystal growth from a beryllium containing solvent matrix was attempted by the travelling solvent method. (Author)
Descriptors : (*SILICON CARBIDES, CRYSTAL GROWTH), CRYSTALLOGRAPHY, SOLID STATE PHYSICS, CHROMIUM, MATHEMATICAL ANALYSIS, ETCHED CRYSTALS, CRYSTAL LATTICES, PHOTOMICROGRAPHY, LASERS, DOPING, ZONE MELTING
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE