Accession Number : AD0672555
Title : ACCOMMODATION OF LATTICE MISMATCH AT HETEROJUNCTIONS.
Descriptive Note : Technical rept.,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF METALLURGY AND MATERIALS SCIENCE
Personal Author(s) : Mroczkowski,R. S. ; Witt,A. F. ; Gatos,H. C.
Report Date : JUL 1968
Pagination or Media Count : 18
Abstract : The accommodation of lattice mismatch at heterojunctions grown by back-melting and subsequent regrowth was investigated employing the InSb-GaSb system. Single crystals of either GaSb or InSb served as the one component (substrate) of the heterojunctions and the regrown part was an alloy of the general formula GaxIn1-xSb. The lattice mismatch at the heterojunction was varied by varying the composition of the regrown alloy. It was found that the accommodation of the lattice mismatch takes place by the generation of dislocations the number of which is consistent with a simple linear lattice model. (Author)
Descriptors : (*SEMICONDUCTING FILMS, CRYSTAL DEFECTS), GALLIUM ALLOYS, INDIUM ALLOYS, ANTIMONY ALLOYS, DISLOCATIONS, DENSITY, PURIFICATION, MELTING, PHOTOMICROGRAPHY
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE