Accession Number : AD0672711

Title :   DISTRIBUTION OF IMPURITIES IN CRYSTALS AS A FUNCTION OF CONDITIONS OF THEIR GROWTH (RASPREDELENIE PRIMESEI V KRISTALLAKH V ZAVISIMOSTI OT USLOVII IKH ROSTA),

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kekua,M. G.

Report Date : 07 DEC 1967

Pagination or Media Count : 13

Abstract : Studies aimed at determining the degree of inhomogeneity in the distribution of a doping impurity with a distribution coefficient in excess of unity were carried out on Ge single crystals doped with Si and grown in three ways: stationary method by slow cooling, pulling by Czochralski's method, and pulling from a melt supplied with a solid ingot. In specimens grown by the stationary method of slow cooling at a cooling rate of 1.5 deg/hr, the ingots were found to be inhomogeneous along the length and cross section. A homogeneous ingot structure was obtained by using the method of supplying the melt. (Author)

Descriptors :   (*CRYSTAL DEFECTS, *CRYSTAL GROWTH), (*GERMANIUM, CRYSTAL DEFECTS), SINGLE CRYSTALS, DOPING, IMPURITIES, SILICON, SOLID SOLUTIONS, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE