Accession Number : AD0672984

Title :   INVESTIGATION OF RADIATION HARDENED CIRCUIT ELEMENTS,

Corporate Author : TRW SYSTEMS REDONDO BEACH CALIF

Personal Author(s) : Scott,Larry

Report Date : 15 FEB 1968

Pagination or Media Count : 33

Abstract : This third scientific report of the investigation of radiation hardened insulated gate field effect devices presents the results of initial device testing with a Q-switched laser and the progress towards improved passivation films. A Q-switched, Nd doped glass laser has been used to show that VTM devices are an order of magnitude less sensitive to ionizing radiation than standard MIS devices without dielectric isolation. Deposited passivation films greatly reduce the leakage currents of n-channel VTM devices. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, HARDENING), SILICON, SEMICONDUCTOR DEVICES, DAMAGE, RADIATION EFFECTS, NUCLEAR RADIATION, SIMULATION, LASERS, TRANSIENTS, SEMICONDUCTORS, OXIDES, SANDWICH CONSTRUCTION, MANUFACTURING

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE