Accession Number : AD0673143

Title :   HIGH-INFORMATION-DENSITY STORAGE SURFACES.

Descriptive Note : Quarterly rept. no. 12, 1 Jan-31 Mar 68,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : Heynick,Louis N.

Report Date : JUL 1968

Pagination or Media Count : 41

Abstract : Progress is described on a program devoted to the preparation and investigation of two novel kinds of electron-beam-addressable storage elements of submicron size and densely packed arrays of these elements, and to the construction of a large-capacity, high-speed, electron-beam-addressable, data-storage system utilizing regular arrays of these elements. Further work on poly(methyl methacrylate), and electron-sensitive material that exhibits both positive- and negative-resist behavior, is discussed leading to a basic procedure for utilizing this material to advantage in storage mosaic formation. A new technique for exposing positive resists in regular patterns of high packing density over large areas is described. This technique is based on the use of a fine-mesh screen as a corresponding array of local electron lenses. Recent developments of aluminum-oxide etching with vaporized lead fluoride (PbF2) are covered, including the use of RF for ameliorating the unwanted etching of molybdenum resist perimeters surrounding the alumina film areas. First results of storage and readout on regular arrays of micro-cap elements are presented. Further development of a computer program for the design of electron-optical systems capable of scanning 100,000,000 elements per field for storage mosaic address is discussed. (Author)

Descriptors :   (*DATA STORAGE SYSTEMS, *MICROELECTRONICS), (*THIN FILM STORAGE DEVICES, SANDWICH CONSTRUCTION), CAPACITORS, DIELECTRIC FILMS, ELECTRON BEAMS, STORAGE TUBES, ELECTRON GUNS, METAL FILMS, MOLYBDENUM, ETCHING, NETWORKS, SPUTTERING, FOCUSING, ELECTRON MICROSCOPY, ACRYLIC RESINS

Subject Categories : Electrical and Electronic Equipment
      Computer Hardware
      Computer Systems

Distribution Statement : APPROVED FOR PUBLIC RELEASE