Accession Number : AD0673845

Title :   THE VELOCITY OF DISLOCATIONS IN SILICON CRYSTALS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Hung Ching, ; Yeh I-Cheng,

Report Date : 03 NOV 1967

Pagination or Media Count : 17

Abstract : The chemical etching method was used to reveal the dislocations produced by indentation on silicon single crystal specimens. Edge (or 60 degree) dislocation velocities are measured under different shear stresses and at different temperatures (700-900 degrees C). By assuming that the motion is thermally activated the corresponding activation energy is found to be about 2.94 eV. The velocities of edge dislocations and screw dislocations at 900 degrees C are compared, the latter being smaller. Measurements of dislocation velocities on different specimens show the retarding effect of as-grown dislocations. Dislocation multiplication is observed from as-grown dislocations from grain boundaries. Dislocation velocities in process of multiplication are measured. Certain factors affecting the measured values of dislocation velocities are discussed.

Descriptors :   (*DISLOCATIONS, TRANSPORT PROPERTIES), (*SILICON, DISLOCATIONS), SEMICONDUCTORS, SINGLE CRYSTALS, ETCHED CRYSTALS, SHEAR STRESSES, HEAT OF ACTIVATION, GRAIN BOUNDARIES, CHINA

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE