Accession Number : AD0674216
Title : HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Descriptive Note : Rept. no. 12 (Final) 1 Mar 65-28 Feb 68,
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
Personal Author(s) : Topfer,Morton L. ; Mitchell,Joseph M. ; Schelhorn,Robert L.
Report Date : AUG 1968
Pagination or Media Count : 100
Abstract : Processing of hafnium and hafnium-dioxide thin-film components is described. Batch anodization techniques are outlined which were used to form resistors and capacitors suitable for microcircuit work on silicon with pattern line widths as narrow as 0.5 mil. Resistance values exceeding 30,000 ohms/sq were achieved and stability data on hafnium thin-film resistors is presented. Temperature coefficient of resistance (TCR) vs sheet resistivity curves have been plotted for resistors fabricated on both glass and glazed alumina substrates. Temperature coefficient of capacitance (TCC) values ranging from +300 to +400 ppm/C have been noted for hafnium-dioxide capacitors. The temperature coefficient of dissipation (TCD) for these elements is in the order of +1%/C. From the measurements obtained, a dielectric constant of 36 was calculated for hafnium-dioxide. Attempts of fabricating a complete circuit employing an 'all hafnium' technology is described. Problems encountered with multilayer sputtering are noted and evaluated. (Author)
Descriptors : (*METAL FILMS, *INTEGRATED CIRCUITS), MICROELECTRONICS, ANODIC COATINGS, HAFNIUM, HAFNIUM COMPOUNDS, OXIDES, SPUTTERING, RESISTORS, CAPACITORS, SILICON, SUBSTRATES, ELECTRIC CONNECTORS, THERMAL STABILITY, FILMS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE