Accession Number : AD0675386

Title :   THE INTERACTION BETWEEN OXYGEN AND BORON IN LIQUID GERMANIUM,

Corporate Author : DEFENCE RESEARCH TELECOMMUNICATIONS ESTABLISHMENT OTTAWA (ONTARIO)

Personal Author(s) : Edwards,W. D.

Report Date : 18 OCT 1967

Pagination or Media Count : 7

Abstract : Germanium crystals containing oxygen and boron concentrations up to approximately 6 x 10 to the 17th power atoms/cc have been grown by the Czochralski method. Electrical conductivity, Hall voltage, and infrared absorption measurements have been made. It is shown that an interaction takes place between boron and oxygen in a germanium melt. In the subsequently grown crystal the oxidized boron is incorporated in a neutral state that neither provides nor measurably scatters charge carriers. The distribution coefficient of the boron in the oxidized state was found to be much less than K = 7, the value that is applicable to elemental boron at the growth rate used. The reaction is reversible in the melt. On dissociation of the boron-oxygen compound, the initial rate of dissociation and reappearance of the boron as a p-type dope depended on the rate of removal of the oxygen from the melt. Boron-doped crystals of essentially constant resistivity were grown from melts containing boron and oxygen. (Author)

Descriptors :   (*GERMANIUM, IMPURITIES), (*CRYSTAL DEFECTS, INTERACTIONS), SEMICONDUCTORS, CRYSTAL GROWTH, LIQUID METALS, OXYGEN, BORON, ELECTRICAL CONDUCTIVITY, HALL EFFECT, INFRARED SPECTRA, CANADA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE