Accession Number : AD0675474
Title : PHOTOEMISSION STUDIES OF THE ELECTRONIC BAND STRUCTURES OF GALLIUM ARSENIDE, GALLIUM PHOSPHIDE, AND SILICON.
Descriptive Note : Technical rept.,
Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
Personal Author(s) : Eden,Richard Carl
Report Date : MAY 1967
Pagination or Media Count : 319
Abstract : Photoemission studies of the electronic energy band structures of gallium arsenide, gallium phosphide, and silicon are reported. The results of measurements of photoemissive yield and energy distributions for photoemitted electrons, as a function of the photon energy of the monochromatic light, are presented for both clean surfaces of GaAs, GaP and silicon, and those surfaces covered with a monolayer of cesium to lower the vacuum level. The structure features of the energy distribution curves for photoemitted electrons for GaAs, GaP, and Si are explained in detail in terms of direct interband transitions in the respective electronic energy band structures of the materials. The overall photoemission results for the three materials are shown to be quite similar, which reflects the basic similarity of their electronic band structures and optical spectra.
Descriptors : (*SEMICONDUCTORS, *BAND THEORY OF SOLIDS), (*PHOTOELECTRIC EFFECT, SEMICONDUCTORS), GALLIUM ARSENIDES, GALLIUM COMPOUNDS, PHOSPHIDES, SILICON, CESIUM, PHOTOTUBES, EPITAXIAL GROWTH, SINGLE CRYSTALS, VACUUM APPARATUS, OPTICAL PROPERTIES, ULTRAVIOLET SPECTRA, VISIBLE SPECTRA, INFRARED SPECTRA, TEST METHODS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE