Accession Number : AD0675578

Title :   EPITAXIAL SILICON AND GALLIUM ARSENIDE THIN FILMS ON INSULATING CERAMIC SUBSTRATES. A State-of-the-Art Report

Descriptive Note : Survey rept.,

Corporate Author : HUGHES AIRCRAFT CO CULVER CITY CALIF ELECTRONIC PROPERTIES INFORMATION CENTER

Personal Author(s) : Milek,John T.

Report Date : AUG 1968

Pagination or Media Count : 156

Abstract : A state-of-the-art literature survey is presented on the success of epitaxial deposition of silicon and gallium arsenide thin films on ceramic substrates for device applications. The electrical, thermal, chemical and crystallographic properties of sapphire, spinel, beryllium oxide, magnesium oxide, diamond, quartz, silicon carbide, aluminum silicate glass, glazed ceramic and other miscellaneous ceramic substrate materials are presented. A master flow chart is developed to identify each variable at each stage of the film/substrate preparation and resultant device fabrication processes. A series of charts identifying each of these variables as reported in the literature for each substrate material is presented. A complete bibliographic review of silicon epitaxial deposition, independent of substrate, is also presented. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, STATE-OF-THE-ART REVIEWS), (*SILICON, SEMICONDUCTING FILMS), (*GALLIUM ARSENIDES, SEMICONDUCTING FILMS), (*CERAMIC MATERIALS, SUBSTRATES), EPITAXIAL GROWTH, SAPPHIRE, SPINEL, BERYLLIUM OXIDES, MAGNESIUM OXIDES, DIAMONDS, QUARTZ, SILICON CARBIDES, GLASS, ELECTRICAL PROPERTIES, THERMAL PROPERTIES, CHEMICAL PROPERTIES, CRYSTAL STRUCTURE, SEMICONDUCTOR DEVICES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE