Accession Number : AD0676165

Title :   THE USE OF P-N JUNCTION SEMICONDUCTOR RADIATION SOURCES IN PHASE OPTICAL RANGING SYSTEMS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Popov,Yu. V. ; Utenkov,B. I. ; Kalinin,V. I.

Report Date : 05 JAN 1968

Pagination or Media Count : 8

Abstract : The report describes studies concerning the modulation phase distribution along the p-n junction in GaAs and GaAsxP1-x incoherent radiation sources and the intensity of such radiation, with a view to creating high-precision optical ranging systems.

Descriptors :   (*RANGE FINDING, SEMICONDUCTOR DEVICES), GALLIUM ARSENIDES, PHOSPHIDES, PHASE MODULATION, SOLID SOLUTIONS, PHOTOMULTIPLIER TUBES, INFRARED RADIATION, GEODESICS, MAPPING, INFRARED LASERS, USSR

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE