Accession Number : AD0677714

Title :   THIN-FILM MEMORY DIODE,

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Richardson,John R. ; Hall,Robert N. ; Richotte,James F.

Report Date : OCT 1968

Pagination or Media Count : 40

Abstract : This report describes further research on the Thin-Film Memory Diode. Improvements in instrumentation have been made which have resulted in much better control and reproducibility. Previous difficulties that had been encountered in making evaporated metal film contacts to the tellurium counterelectrode have been overcome. Good switching characteristics can now be obtained with evaporated film electrodes instead of metal probe contacts to the tellurium. Preliminary tests show that these diodes are tolerant to a slow neutron flux of at least 10 to the 14th power nvt/sq cm, as well as to over 7,000,000 of cobalt 60 gamma irradiation. Memory arrays having either destructive or nondestructive read-out have been designed, and preliminary steps for the construction of such memory arrays are underway. (Author)

Descriptors :   (*MEMORY DEVICES, *SEMICONDUCTOR DIODES), SEMICONDUCTING FILMS, TELLURIUM, GALLIUM ARSENIDES, DAMAGE, RADIATION EFFECTS, VAPOR PLATING, VACUUM APPARATUS, METAL FILMS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE