Accession Number : AD0678302

Title :   INVESTIGATION OF P-JUNCTIONS PRODUCED ON THE BASIS OF SILICON CARBIDE ALLOYED WITH BERYLLIUM,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kalnin,A. A. ; Pasynkov,V. V. ; Tairoy,Yu. M. ; Yaskov,D. A.

Report Date : 19 DEC 1967

Pagination or Media Count : 8

Abstract : Electroluminescent p-n-junctions based on p-SiC(Be), prepared by various methods, are described. Volt-ampere, volt-capacitive, and spectral characteristics of the p-n-junctions are presented. Satisfactory rectifying properties were obtained from grown p-n-junctions in the plane perpendicular to axis c. (Author)

Descriptors :   (*SEMICONDUCTORS, LUMINESCENCE), (*SILICON CARBIDES, *ELECTROLUMINESCENCE), CRYSTAL GROWTH, BERYLLIUM, DOPING, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE