Accession Number : AD0678880

Title :   GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : Bartlett,R. W. ; Mueller,R. A. ; Barlow,M.

Report Date : AUG 1968

Pagination or Media Count : 52

Abstract : Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. (Author)

Descriptors :   (*SILICON CARBIDES, SEMICONDUCTOR DEVICES), (*SEMICONDUCTOR DEVICES, EPITAXIAL GROWTH), DOPING, VAPOR PLATING, CRYSTALLOGRAPHY, PHOTOMICROGRAPHY, ETCHED CRYSTALS, ELECTRICAL PROPERTIES, METAL FILMS, GOLD, PLATINUM, DIFFUSION

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE