Accession Number : AD0679636
Title : RESEARCH IN PURIFICATION AND SINGLE CRYSTAL GROWTH OF II-VI COMPOUNDS.
Descriptive Note : Final rept. 15 Apr 65-14 Apr 68,
Corporate Author : EAGLE-PICHER INDUSTRIES INC MIAMI OKLA MIAMI RESEARCH LABS
Personal Author(s) : Fahrig,Richard H. ; Webb,George N. ; Brown,Lloyd W.
Report Date : MAY 1968
Pagination or Media Count : 146
Abstract : A process for the purification of cadmium metal by multiple treatment steps is described. Impurities in cadmium, as determined by emission spectrographic, mass spectrographic, and atomic absorption are given in tabular form. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. Less than 1 part per million (atomic) total impurities was found by the mass spectrograph in two batches of CdS. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt is reported. Included are data concerning doping of melt grown crystals with various elemental dopants, and, in the case of some compound semiconductors, the maximum doping levels possible by this method. The results of vapor phase crystal growth of CdS and ZnS, are given. Preliminary experiments with hydrothermal and gel diffusion crystal growth are reported. (Author)
Descriptors : (*SEMICONDUCTORS, *CRYSTAL GROWTH), (*CADMIUM COMPOUNDS, SEMICONDUCTORS), (*ZINC COMPOUNDS, SEMICONDUCTORS), SINGLE CRYSTALS, PURIFICATION, SUBLIMATION, DIFFUSION, GELS, DOPING, IMPURITIES, MASS SPECTROSCOPY, ATOMIC SPECTROSCOPY, CADMIUM SULFIDES, CADMIUM SELENIDES, ZINC SULFIDES, CADMIUM
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE