Accession Number : AD0680049
Title : VAPOR-SOLVENT GROWTH OF SEMICONDUCTING CRYSTALS.
Descriptive Note : Final rept. 1 Dec 62-31 May 66,
Corporate Author : IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
Personal Author(s) : Jona,Franco P.
Report Date : 1966
Pagination or Media Count : 18
Abstract : The report describes the accomplishments of the research effort that was aimed at improving the fundamental understanding of the mechanisms of crystal growth from the vapor phase by way of one or several chemical transport reactions. The results of studies of equilibrium, vapor-transport and surface characteristics in the systems Ge-1, Ge-Br, Ge-Ga-I, Si-H-Cl, Ge/GaAs and Si/Si are described. Lists of publications, oral presentations and patent disclosures originated by the contract-supported work are given. (Author)
Descriptors : (*SEMICONDUCTORS, *CRYSTAL GROWTH), VAPORS, GERMANIUM COMPOUNDS, HALIDES, SILICON COMPOUNDS, SURFACE PROPERTIES, DYNAMICS
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE