Accession Number : AD0680861

Title :   PIEZO-ABSORPTION IN GERMANIUM.

Descriptive Note : Final scientific rept.,

Corporate Author : CITY COLL NEW YORK DEPT OF PHYSICS

Personal Author(s) : Erlbach,Erich

Report Date : 19 DEC 1968

Pagination or Media Count : 6

Abstract : The measurements of the piezo-absorption in the absorption edge region for germanium and silicon was concluded. A theoretical calculation of the matrix elements for these indirect transitions at the center of the Brillouin Zone in silicon was published in the Physical Review. The feasibility of using infrared absorption in the free carrier region of germanium to determine the relative electron population in the various valleys in n-germanium under uniaxial stress was demonstrated. The equipment for measuring the 'warm' electron coefficient in germanium for arsenic doped n-Ge was assembled. (Author)

Descriptors :   (*GERMANIUM, PIEZOELECTRIC EFFECT), (*BAND THEORY OF SOLIDS, GERMANIUM), BRILLOUIN ZONES, INFRARED RADIATION, ABSORPTION SPECTRA, SEMICONDUCTORS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE