Accession Number : AD0681667

Title :   CERTAIN ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF AN HgTe-ZnTe SYSTEM,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Shneider,A. D. ; Tsyutsyura,D. I. ; Makarenko,V. V. ; Hryhorovych,H. M.

Report Date : 14 MAY 1968

Pagination or Media Count : 8

Abstract : The temperature dependence of the Hall coefficient (R) and the conductivity of HgTe and of several solid solutions of HgTe-ZnTe with small content of ZnTe were investigated. The temperature dependence of the Hall coefficients of three types of the samples is typical of hole semiconductors with large mobility ratios. The curves indicate intrinsic conductivity. The temperature dependence of the thermoelectric power indicates that at a sufficiently low temperature the Hall coefficient changes sign. The electron mobility at 78K has been determined from data on the intrinsic conductivity. The width of the forbidden band increases practically linearly with increasing ZnTe content. The kinetic behavior of the photoconductivity is complex, with long-lasting components predominating. (Author)

Descriptors :   (*TELLURIDES, *SEMICONDUCTORS), (*MERCURY COMPOUNDS, SEMICONDUCTORS), (*PHOTOCONDUCTIVITY, TELLURIDES), ZINC COMPOUNDS, CRYSTAL DEFECTS, IMPURITIES, SOLID SOLUTIONS, TEMPERATURE, USSR

Subject Categories : Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE