Accession Number : AD0681719

Title :   TEMPERATURE DEPENDENCE OF THE RESISTIVITY AND HALL EFFECT OF THIN CdS FILMS,

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Jimenez,Ricardo

Report Date : DEC 1968

Pagination or Media Count : 62

Abstract : A system was set up to study the resistivity and Hall mobility in thin semiconductor films as a function of temperature. For vacuum deposited CdS films exhibiting photoluminescence resistivity data were taken for the temperature range from 77K to 400K, while the Hall mobility was measured between 300K and 400K. A plot of the resistivity data showed an exponential variation with temperatures from 250K to 400K. From theoretical considerations, it was inferred that the donor levels were not discrete within the energy bandgap. No systematic variation of the resistivity was observed at temperatures between 77K and 200K. The resistivities of the samples varied over a wide range from 1 ohm-cm to 10 to the 7th power ohm-cm at 300K. The Hall mobility data for the CdS films showed mobilities between one and two sq cm/V-sec, and also a consistent exponential variation with temperature. The measured values of the mobility and its exponential behavior were in good agreement with reported values for CdS films. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, *CADMIUM SULFIDES), ELECTRICAL RESISTANCE, HALL EFFECT, CRYOGENICS, HIGH TEMPERATURE, FILMS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE