Accession Number : AD0681798

Title :   THE CHLORINE ETCHING OF SINGLE CRYSTAL SILICON,

Corporate Author : GENERAL DYNAMICS/ASTRONAUTICS SAN DIEGO CALIF

Personal Author(s) : Baker,C. E. ; Goble,G. J.

Report Date : 13 NOV 1961

Pagination or Media Count : 39

Abstract : The feasibility of using chlorine gas to etch silicon surfaces was demonstrated. The effect of illumination and temperature on the reaction was studied. Optimum results were obtained when the silicon was heated to 450C and illuminated with a high pressure mercury lamp. Current theories of etching both by acid solution and halogen vapor are discussed. (Author)

Descriptors :   (*SILICON, *ETCHING), SURFACE PROPERTIES, CRYSTAL DEFECTS, PHOTOMICROGRAPHY, TEMPERATURE, SEMICONDUCTORS, ULTRAVIOLET RADIATION, SINGLE CRYSTALS, ETCHED CRYSTALS, CHLORINE

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE