Accession Number : AD0681874

Title :   SUPPRESSION OF THE SEMICONDUCTOR-METAL TRANSITION IN VANADIUM OXIDES.

Descriptive Note : Technical rept.,

Corporate Author : RENSSELAER POLYTECHNIC INST TROY N Y

Personal Author(s) : Kennedy,T. N. ; Mackenzie,J. D.

Report Date : DEC 1968

Pagination or Media Count : 13

Abstract : V2O3 and V2O4 films have been sputtered by a radio-frequency technique onto relatively cold substrates. The films were amorphous according to x-ray diffraction. Their electrical resistivities at-100C corresponded to that of the respective high temperature phases of the crystals. However, unlike the crystalline solids, the amorphous films did not exhibit the so-called semiconductor-metal transition. At 25C, because of the absence of this transition, the conductivity of amorphous V2O4 is almost four orders of magnitude greater than that of the crystal. (Author)

Descriptors :   (*TRANSITION METALS, SPUTTERING), VANADIUM, OXIDES, METAL FILMS, SUBSTRATES, X RAY DIFFRACTION, ELECTRICAL RESISTANCE, METAL CRYSTALS, CONDUCTIVITY, SEMICONDUCTORS

Subject Categories : Metallurgy and Metallography
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE