Accession Number : AD0683199

Title :   STUDY OF POLARITY DETERMINATION IN SILICON CARBIDE STRUCTURE BY ETCHING METHOD,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kuo Ch'ang-lin, ; T'ang Shih-hsin,

Report Date : 26 AUG 1968

Pagination or Media Count : 12

Abstract : The authors describe their experiments on negative and positive c faces in silicon carbide. The authors conclude that the faces can be distinguished by observing the bluntness and sharpness of the edges occurring due to etching speed variation, and the positive c face is a carbon face and the negative one, a silicon face.

Descriptors :   (*CRYSTAL STRUCTURE, SILICON CARBIDES), (*SILICON CARBIDES, SURFACE PROPERTIES), ETCHED CRYSTALS, SEMICONDUCTORS, DISLOCATIONS, POLARIZATION, CHINA

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE