Accession Number : AD0683700
Title : INFLUENCE OF DYNAMIC STRAIN ON SILICON JUNCTIONS.
Descriptive Note : Interim rept. no. 1, 1 Jan 67-1 Jan 69,
Corporate Author : RESEARCH TRIANGLE INST DURHAM N C
Personal Author(s) : Wortman,J. J. ; Monteith,L. K. ; Brooks,A. D.
Report Date : JAN 1969
Pagination or Media Count : 87
Abstract : The effect of large strains on the electrical properties of p-n junctions was studied by electromagnetically driving with a sinusoidal force a cantilevered silicon beam into which the junctions are diffused. Stress levels greater than 10 to the 9th power dynes/sq cm was obtained at the natural resonant frequency of the beam (typically 200 Hz). An asymmetry was observed in the junction current which shows clearly a difference in response to compressive and tensile forces. With increasing compressive forces the usual increase in junction current was observed. In tension, however, an increasing force first resulted in a decreasing current then an increasing current. No first order influences of time dependent lifetime effects or reversible defect creation in the junctions were observable. These observations are correlated with a theoretical model for the piezojunction effect based on stress induced changes in the energy band structure of the material. (Author)
Descriptors : (*SEMICONDUCTORS, STRAIN(MECHANICS)), ELECTRICAL PROPERTIES, STRESSES, BAND THEORY OF SOLIDS, SILICON, TEST METHODS, RODS, VIBRATION
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE