Accession Number : AD0684014
Title : INFLUENCE OF ACTIVE GASES ON THE ELECTROPHYSICAL PROPERTIES OF THE SURFACE OF SILICON,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s) : Arslambekov,V. A. ; Smirnov,G. V.
Report Date : 14 NOV 1968
Pagination or Media Count : 11
Abstract : The purpose of the investigation was to compare the electrophysical properties of a pure silicon surface with a surface coated by the film produced during chemical etching. The tests were made on n-type single-crystal silicon cut along the (111) plane and polished with corundum. The tests were made in atmospheres of air, hydrogen fluoride, gaseous fluorine, and other gases, and also in vacuum. Most experiments were performed at room temperature. The rate of surface recombination of the minority carriers was determined from the relaxation time of the photoconductivity after elimination by short light pulses from a flash lamp especially constructed for the purpose. The results showed that the etching reduces the surface recombination as result of the increased number of defects produced by the film. The causes for differences between the effects of different gases are explained.
Descriptors : (*SILICON, *SURFACE PROPERTIES), (*ETCHING, SILICON), (*PHOTOCONDUCTIVITY, SILICON), CRYSTAL DEFECTS, IMPURITIES, RELAXATION TIME, FLUORIDES, HYDROGEN COMPOUNDS, USSR, GASES, FLUORINE, AIR
Subject Categories : Physical Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE