Accession Number : AD0684444
Title : EXPERIMENTAL STUDY OF SUPERCONDUCTING THIN-FILM TUNNEL DIODES.
Descriptive Note : Technical note,
Corporate Author : NAVAL CIVIL ENGINEERING LAB PORT HUENEME CALIF
Personal Author(s) : Hitchcock,R. D.
Report Date : 17 FEB 1967
Pagination or Media Count : 30
Abstract : A vacuum deposition method is described for fabricating superconducting thin-film tunnel diodes which consist of an oxidized aluminum (Al) film in contact with a lead (Pb) film. The method produced stable diodes by growing the oxide film in a low-pressure atmosphere of dry oxygen; pressure during metal-film deposition was around 0.001 torr. In some of the diodes the superconducting transition temperature of Al was near 2 degrees K. Zero-voltage current was observed in some of the a-c driven diodes, at temperatures below 1.8 degrees K. An experiment was conducted to determine the response of an Al/Al2O3/Pb superconducting thin-film diode to incoherent submillimeter radiation. (Author)
Descriptors : (*SUPERCONDUCTORS, TUNNEL DIODES), (*TUNNEL DIODES, MANUFACTURING), SUBMILLIMETER WAVES, VAPOR PLATING, VACUUM APPARATUS, METAL FILMS, TRANSITION TEMPERATURE, CRYOGENICS, ALUMINUM, LEAD(METAL)
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE