Accession Number : AD0684444

Title :   EXPERIMENTAL STUDY OF SUPERCONDUCTING THIN-FILM TUNNEL DIODES.

Descriptive Note : Technical note,

Corporate Author : NAVAL CIVIL ENGINEERING LAB PORT HUENEME CALIF

Personal Author(s) : Hitchcock,R. D.

Report Date : 17 FEB 1967

Pagination or Media Count : 30

Abstract : A vacuum deposition method is described for fabricating superconducting thin-film tunnel diodes which consist of an oxidized aluminum (Al) film in contact with a lead (Pb) film. The method produced stable diodes by growing the oxide film in a low-pressure atmosphere of dry oxygen; pressure during metal-film deposition was around 0.001 torr. In some of the diodes the superconducting transition temperature of Al was near 2 degrees K. Zero-voltage current was observed in some of the a-c driven diodes, at temperatures below 1.8 degrees K. An experiment was conducted to determine the response of an Al/Al2O3/Pb superconducting thin-film diode to incoherent submillimeter radiation. (Author)

Descriptors :   (*SUPERCONDUCTORS, TUNNEL DIODES), (*TUNNEL DIODES, MANUFACTURING), SUBMILLIMETER WAVES, VAPOR PLATING, VACUUM APPARATUS, METAL FILMS, TRANSITION TEMPERATURE, CRYOGENICS, ALUMINUM, LEAD(METAL)

Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE