Accession Number : AD0684643

Title :   THREE-LEVEL LOGIC ELEMENTS ON FERRITE TRANSISTOR CELLS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s) : Troitskaya, M. P.

Report Date : 27 SEP 1968

Pagination or Media Count : 11

Abstract : A 3-level ferrite-transistor memory element was developed for storing, reading, and shaping a ternary code. This element was used as a basis for designing a ternary half-adder; the element can perform all three ternary-algebra operations: inversion, conjunction, and disjunction. Laboratory tests of the half-adder hookup proved that: (1) Single-channel links for ternary information transmission enhances the adder reliability; (2) All elements are loaded uniformly and with not more than two similar elements, which also enhances reliability; (3) Only one cycle is used for receiving addends and forming the sum; hence, no matching devices are needed for using the half-adder in an arithmetic unit; (4) All elements can be designed as identical modules.

Descriptors :   (*COMPUTER LOGIC, MAGNETIC CORES), LOGIC CIRCUITS, USSR.

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE