Accession Number : AD0684907

Title :   CONCENTRATION PROFILES OF TWO-STEP DIFFUSIONS OF BORON INTO SILICON,

Corporate Author : HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s) : Dudley,Edward P.

Report Date : JAN 1969

Pagination or Media Count : 44

Abstract : The concentration profiles of boron diffused into silicon were experimentally determined for two-step diffusions yielding surface concentrations near 10 to the 18th power/cu cm. The average diffusion coefficient of boron in silicon at 1150C was found. A flat portion of the experimental curves indicating a constant boron concentration near the silicon surface is explained on the basis of a segregation phenomenon at the silicon oxide-silicon interface. (Author)

Descriptors :   (*BORON, DIFFUSION), (*SILICON, *DOPING), SILICON, CONCENTRATION(CHEMISTRY), IMPURITIES, ELECTRICAL CONDUCTIVITY, SEMICONDUCTORS

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE